Volume 93, Number 4, February 2011
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||28 February 2011|
Optical traps for electrons produced by Pauli blocking
Institut des NanoSciences de Paris, Université Pierre et Marie Curie, CNRS - Tour 22, 4 place Jussieu, 75005 Paris, France, EU
2 Department of Physics and Astronomy, Michigan State University - East Lansing, MI 48824, USA
Accepted: 2 February 2011
We propose a mechanism to trap electrons in a semiconductor using counter-propagating laser beams. The trapping comes from Pauli blocking between electrons and virtual excitons coupled to unabsorbed photons. Electron exchange allows for the possibility of momentum transfer between photons and electrons. This leads to a sinusoidal trap for electrons with a period determined by the laser beam modulation. The depth of the trap is proportional to the laser intensity and inversely proportional to the exciton-photon detuning.
PACS: 71.35.-y – Excitons and related phenomena
© EPLA, 2011
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