Volume 104, Number 4, November 2013
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||17 December 2013|
Resonant creation of indirect excitons in diamond at the phonon-assisted absorption edge
1 Department of Physics, Kyoto University - Kitshirakawa-Oiwake-cho, Sakyo-ku, Kyoto 606-8502, Japan
2 Department of Physics, The University of Tokyo, and CREST, JST - Tokyo 113-8656, Japan
3 Institute for Integrated Cell-Material Sciences (WPI-iCeMS), Kyoto University, and CREST, JST Kyoto 606-8501, Japan
Received: 20 September 2013
Accepted: 27 November 2013
We have developed a new scheme for generating cold and high-density excitons in diamond by resonant excitation at the phonon-assisted absorption edge. Both the thermalization of excitons between fine-structure states and the effective temperature are examined with the tuning of the photon energy. The down-conversion rate for the excitons in the fine-structure states is found to be 3.5 ns independent of the photon energy, which means that the lowest-energy dark exciton can be created within a time scale comparable to its lifetime via the generation of a higher-energy bright exciton. With careful choice of excitation photon energy, we have achieved an electron-hole pair density of while maintaining the effective excitonic temperature below 15 K.
PACS: 71.35.Cc – Intrinsic properties of excitons; optical absorption spectra / 78.47.jd – Time resolved luminescence / 71.35.Ee – Electron-hole drops and electron-hole plasma
© EPLA, 2013
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