Volume 94, Number 1, April 2011
|Number of page(s)||6|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||07 April 2011|
Ultra-thin high-quality silicon nitride films on Si(111)
Institute of Solid State Physics, University of Bremen - Postfach 330440, D–28334 Bremen, Germany, EU
2 ELETTRA Synchrotron Light Source - Strada Statale 14, km 163.5, 34149 Basovizza, Trieste, Italy, EU
3 School of Physics and Astronomy, University of Nottingham - Nottingham NG7 2RD, UK, EU (b)
4 NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore - Piazza San Silvestro 12, 56127 Pisa, Italy, EU
Accepted: 9 March 2011
Ultra-thin silicon nitride films grown by exposure of Si(111) substrates to a flux of atomic nitrogen at temperatures between 700 °C and 1050 °C have been investigated by means of X-ray spectromicroscopy, atomic force microscopy, X-ray reflectivity, and X-ray photoemission spectroscopy. The films show a Si3N4 stoichiometry. For reactive nitride growth at temperatures below 800 °C, a smooth surface and interface morphology is found. Higher temperatures lead to the formation of rough films with holes and grooves of increasing size, approaching a lateral size of several hundred nanometers for growth temperatures above 900 °C. Nonetheless, X-ray spectromicroscopy shows that the bottom of the holes consists of Si3N4.
PACS: 68.55.-a – Thin film structure and morphology / 68.37.Xy – Scanning Auger microscopy, photoelectron microscopy / 61.05.cm – X-ray reflectometry (surfaces, interfaces, films)
© EPLA, 2011
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