Volume 96, Number 1, October 2011
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||23 September 2011|
N-type conductivity of nanostructured thin film composed of antimony-doped Si nanocrystals in silicon nitride matrix
ARC Photovoltaic Centre of Excellence, University of New South Wales - Sydney, New South Wales 2052, Australia
Accepted: 21 August 2011
Highly conductive thin films composed of antimony-doped Si nanocrystals (Si-NCs) embedded in the Si3N4 matrix were prepared by co-sputtering technique. The N-type electrical behavior in the doped films as observed from Hall measurements was attributed to free carriers generation resulting from the effective Sb doping. Quantitative analysis has demonstrated that effective Sb doping at a concentration of 0.54 at.% results in an improvement on the electrical conductivity (σ) by more than six orders of magnitude, up to 2.8×10−2 S/cm. The charge transport mechanism can be explained well by the percolation-hopping model where the conductivity follows σ∼ exp[−(T0/T)]1/2 at temperature lower than 220 K.
PACS: 73.63.Bd – Nanocrystalline materials / 88.40.fh – Advanced materials development
© EPLA, 2011
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