Effect of oxygen vacancy concentration on domain switching of Bi3.15Nd0.85Ti3O12

H. Huang; X. L. Zhong; S. H. Xie; Y. Zhang; J. B. Wang; Y. C. Zhou

doi:10.1209/0295-5075/94/37002

All issues

Volume 94 / No 3 (May 2011)

EPL, 94 3 (2011) 37002

Abstract

Issue		EPL Volume 94, Number 3, May 2011


Article Number		37002
Number of page(s)		4
Section		Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
DOI		https://doi.org/10.1209/0295-5075/94/37002
Published online		14 April 2011

EPL, 94 (2011) 37002

Effect of oxygen vacancy concentration on domain switching of Bi_3.15Nd_0.85Ti₃O₁₂

H. Huang¹^,2, X. L. Zhong¹^,2^a, S. H. Xie¹^,2, Y. Zhang¹^,2, J. B. Wang¹^,2^b and Y. C. Zhou¹^,2

¹ Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University - Hunan Xiangtan 411105, China
² Faculty of Materials, Optoelectronics and Physics, Xiangtan University - Hunan Xiangtan 411105, China

^a xlzhong@xtu.edu.cn
^b jbwang@xtu.edu.cn

Received: 17 March 2011
Accepted: 28 March 2011

Abstract

Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) thin films with different oxygen vacancy concentrations were prepared by annealing in air and nitrogen atmospheres. The effects of oxygen vacancy concentration on microstructures and domain switching of BNT thin films were investigated. It is found that the film annealed in air atmosphere possesses higher crystallinity, larger grain size, better electrical properties and more complete domain switching than those of the film annealed in nitrogen atmosphere. The results demonstrate that oxygen vacancies play a significant role in domain switching and in the electrical properties of BNT films, and low oxygen vacancy concentration is propitious to domain switching.

PACS: 77.80.Fm – Switching phenomena / 77.80.Dj – Domain structure; hysteresis / 77.84.-s – Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials

© EPLA, 2011

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