Volume 97, Number 5, March 2012
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||05 March 2012|
Polar ZnO thin-film nonvolatile transistors with (Bi, Nd)4Ti3O12 gate insulators
Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University - Hunan Xiangtan 411105, China Faculty of Materials, Optoelectronics and Physics, Xiangtan University - Hunan Xiangtan 411105, China
Accepted: 8 February 2012
Polar ZnO thin-film transistors (TFTs) with (Bi,Nd)4Ti3O12 (BNT) as well as SiO2 gate insulators were fabricated. The polarization-voltage (P-V) hystersis loops of ZnO/BNT and BNT films and the electrical properties of prepared TFTs were investigated. The P-V loop of a ZnO/BNT film shows obvious asymmetrical widening. The threshold voltage, channel mobility, and on/off ratio of ZnO/BNT TFTs reach to 1.3 V, 3.5 cm2 V−1 s−1, and 8×107, respectively. Notably, the device shows a nearly unchanged memory window of about 3.9 V after a 24 h retention test and a large drain-current on/off ratio of about 107 after a 24 h data retention test. These can be mainly attributed to the polarization interaction and the relatively good interface properties between a ZnO film and a BNT film. These results suggest that the ZnO/BNT TFTs are suitable for nonvolatile digital circuits on a flat panel display system.
PACS: 73.61.Ga – II-VI semiconductors / 73.40.Qv – Metal-insulator-semiconductor structures (including semiconductor-to-insulator) / 77.55.hf – ZnO
© EPLA, 2012
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.