Volume 95, Number 4, August 2011
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||26 July 2011|
Coaction of strain and polarization effects on tuning the photoinduced resistance changes in La0.9Sr0.1MnO3 films
Department of Physics, The University of Hong Kong - Pokfulam Road, Hong Kong
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, PRC
Accepted: 27 June 2011
We had epitaxially grown La0.9Sr0.1MnO3 (LSMO) thin films on ferroelectric 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) single-crystal substrates. The electric-field controls of transport and photoinduced resistance (PR) changes were observed in LSMO films. The variations of PR under different electric fields applied to the LSMO/PMN-PT structure were quite different when PMN-PT was in positively and negatively polarized states, which can be attributed to the coaction of both electric-field–induced lattice strain effect and ferroelectric polarization effect. These results provide us another route to see the nature of modulating the properties of manganite films by external electric fields.
PACS: 72.40.+w – Photoconduction and photovoltaic effects / 71.38.-k – Polarons and electron-phonon interactions / 77.22.Ej – Polarization and depolarization
© EPLA, 2011
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