Volume 100, Number 4, November 2012
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||04 December 2012|
Colossal elastoresistance and strain effects on phase-separated Pr0.5Sr0.5MnO3 films
1 Physics Department, Zhejiang Normal University - Jinhua 321004, Zhejiang, PRC
2 Physics Department, The University of Hong Kong - Pokfulam Road, Hong Kong
3 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, PRC
Received: 5 September 2012
Accepted: 8 November 2012
We have studied the electrically tunable strain effects on phase-separated Pr0.5Sr0.5MnO3 films epitaxially grown on ferroelectric 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 (001) substrates. Upon cooling, the film shows a ferromagnetic metal to antiferromagnetic insulator (FMM-AFI) transition at low temperature. Such a transition is depressed and finally disappears in electrical properties with increasing electric field applied on the substrate. Under an electric field of 6 kV/cm, a large reversible resistance drop (∼85%) as well as an enhancement of magnetization is achieved. In situ X-ray diffraction indicates that the substrate-induced strain plays a crucial role in determining the properties in the film by tuning the phase competition between the ferromagnetic metallic and antiferromagnetic insulating state. The FMM-AFI transition in the film is demonstrated to be originated from a large biaxial strain. With decreasing strain, the FMM state is enhanced, leading to a colossal elastoresistance.
PACS: 75.30.Kz – Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.) / 73.50.-h – Electronic transport phenomena in thin films
© EPLA, 2012
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