Volume 95, Number 6, September 2011
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||08 September 2011|
Ultra-thin silicon nitride barrier implementation for Si nano-crystals embedded in amorphous silicon carbide matrix with hybrid superlattice structure
Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, University of New South Wales Sydney 2052, Australia
Accepted: 9 August 2011
A hybrid superlattice structure consisting of 30 periods of alternating amorphous Si0.7C0.3 (5 nm) layers and ultra-thin Si3N4 barrier layers (0.2–2.0 nm) has been synthesised by magnetron sputtering, with subsequent annealing by a rapid thermal annealing (RTA) process. Si nano-crystals behave well confined within individual layers when the Si3N4 layer thickness is over 0.8 nm, due to the Si very low diffusion coefficient in Si3N4 matrix. Hopping is regarded as the dominant carrier transportation mechanism in the film based on fitting the temperature-dependent I-V measurements results. In conclusion an optimum Si3N4 barrier layer thickness of approximately 0.8 nm may be appropriate as a candidate material for photovoltaic application.
PACS: 73.63.Kv – Quantum dots
© EPLA, 2011
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.