Volume 97, Number 2, January 2012
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||09 January 2012|
Strain-induced topological insulating behavior in ternary chalcogenide Ge2Sb2Te5
Department of Materials Science and Engineering, College of Materials, Xiamen University 361005 Xiamen, China
2 Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University 361005 Xiamen, China
3 Department of Physics and Astronomy, Condensed Matter Theory Group - Box 520, 75120 Uppsala, Sweden, EU
4 Department of Materials and Engineering, Royal Institute of Technology - 10044 Stockholm, Sweden, EU
Accepted: 30 November 2011
We unraveled the strain-induced topological insulating behavior in Ge2Sb2Te5 (GST) by means of ab initio calculations. The semiconductor–to–topological-insulator (TI) transition of Ge2Sb2Te5 were induced by the strains along the ⟨ 100⟩ and ⟨ 110⟩ direction as well as the shear strains. Ge2Sb2Te5 exhibits three types of TI-characterized conducting surface states: the single Dirac cone feature, the odd band-type and the Bi2Se3-type. The physical origin of the semiconductor-TI transition is the strain-induced inversion of the characterizations of conduction band minimum and valence band maximum with spin-orbit coupling. The present results suggest that GST-related materials are a new family of strain-induced TI.
PACS: 71.15.Mb – Density functional theory, local density approximation, gradient and other corrections / 71.20.Nr – Semiconductor compounds / 71.70.Fk – Strain-induced splitting
© EPLA, 2012
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.