Volume 98, Number 2, April 2012
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||30 April 2012|
Light emission and spin-polarised hole injection in InAs/GaAs quantum dot heterostructures with Schottky contact
Centro de Física, Universidade do Minho, Campus de Gualtar - Braga 4710-057, Portugal, EU
2 Physical-Technical Research Institute, N.I. Lobachevskii University - Nihzniy Novgorod, Russia
3 SEMICUAM, Departamento de Física de Materiales, Universidad Autónoma - Madrid, Spain, EU
Accepted: 26 March 2012
We demonstrate the feasibility to obtain electroluminescence (EL), up to room temperature, from InGaAs self-assembled quantum dots (QDs) included in a forward-biased Schottky diode. Moreover, using a ferromagnet (FM) as the contact layer, sizable circular polarization of the EL emission in the presence of an external magnetic field is obtained. A resonant behavior of the degree of circular polarization (P) as a function of the applied voltage (V), for a given value of magnetic field, is observed. We explain our findings using a model including tunneling of (spin-polarised) holes through the metal-semiconductor interface, transport in the near-surface region of the heterostructure and out-of-equilibrium statistics of the injected carriers occupying the available states in the QD heterostructure. In particular, the resonant P(V) dependence is related to the splitting of the quasi-Fermi level for two spin orientations in the FM.
PACS: 78.67.-n – Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures / 72.25.Hg – Electrical injection of spin polarized carriers / 72.25.Mk – Spin transport through interfaces
© EPLA, 2012
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