Volume 99, Number 1, July 2012
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||12 July 2012|
Strain-induced semimetal-metal transition in silicene
College of Physics and Communication Electronics, Jiangxi Normal University - Nanchang, Jiangxi, 330022, PRC
Received: 16 April 2012
Accepted: 19 June 2012
The effect of the tensile strain on the electronic structure of the silicene is studied by using first-principles density functional theory. It is found that a semimetal-metal transition occurs when an in-plane strain larger than 7.5% is applied in silicene. The downward movement of the lowest conduction band at Γ-point, which originates from the weakened interaction between neighboring Si atoms, leads to the transition. The proposed mechanical control of the electronic properties will widen the application of the silicene in Si-based nanotechnology.
PACS: 73.22.-f – Electronic structure of nanoscale materials and related systems / 71.15.Mb – Density functional theory, local density approximation, gradient and other corrections
© EPLA, 2012
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