| Issue |
EPL
Volume 100, Number 3, November 2012
|
|
|---|---|---|
| Article Number | 37003 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/100/37003 | |
| Published online | 13 November 2012 | |
Fluorinated monovacancies in graphene: Even-odd effect
PSE Division, KAUST - Thuwal 23955-6900, Kingdom of Saudi Arabia
(a) udo.schwingenschlogl@kaust.edu.sa
Received: 7 June 2012
Accepted: 13 October 2012
The electronic and structural properties of fluorinated monovacancies in graphene are studied using density functional theory. Our calculations show that an odd number of F atoms adsorbed on a monovacancy gives rise to a p-type metallic state with a local magnetic moment of 1 μB. In contrast, an even number of F atoms leads to a non-magnetic semiconducting state. We explain the behaviour in terms of local structure properties.
PACS: 73.22.Pr – Electronic structure of graphene
© EPLA, 2012
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