| Issue |
EPL
Volume 99, Number 5, September 2012
|
|
|---|---|---|
| Article Number | 57002 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/99/57002 | |
| Published online | 12 September 2012 | |
Ge-intercalated graphene: The origin of the p-type to n-type transition
PSE Division, KAUST - Thuwal 23955-6900, Kingdom of Saudi Arabia
(a) udo.schwingenschlogl@kaust.edu.sa
Received: 5 March 2012
Accepted: 31 July 2012
Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C6 and C8 bilayer graphene, bulk C6Ge and C8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs.
PACS: 73.22.Pr – Electronic structure of graphene
© EPLA, 2012
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