Issue |
EPL
Volume 99, Number 5, September 2012
|
|
---|---|---|
Article Number | 57002 | |
Number of page(s) | 6 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/99/57002 | |
Published online | 12 September 2012 |
Ge-intercalated graphene: The origin of the p-type to n-type transition
PSE Division, KAUST - Thuwal 23955-6900, Kingdom of Saudi Arabia
(a) udo.schwingenschlogl@kaust.edu.sa
Received: 5 March 2012
Accepted: 31 July 2012
Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C6 and C8 bilayer graphene, bulk C6Ge and C8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs.
PACS: 73.22.Pr – Electronic structure of graphene
© EPLA, 2012
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.