Issue |
EPL
Volume 100, Number 3, November 2012
|
|
---|---|---|
Article Number | 37001 | |
Number of page(s) | 5 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/100/37001 | |
Published online | 07 November 2012 |
Scaling of the transition temperature of hole-doped cuprate superconductors with the charge-transfer energy
1 T.C.M. Group - University of Cambridge, Cavendish Laboratory - J.J. Thomson Ave., Cambridge CB3 0HE, UK, EU
2 Department of Physics and Astronomy, Rutgers University - Piscataway, NJ 08854-8019, USA
Received: 22 October 2012
Accepted: 24 October 2012
We use first-principles calculations to extract two essential microscopic parameters, the charge-transfer energy and the inter-cell oxygen-oxygen hopping, which correlate with the maximum superconducting transition temperature Tc,max across the cuprates. We explore the superconducting state in the three-band model of the copper-oxygen planes using cluster Dynamical Mean-Field Theory. We find that the variation in the charge-transfer energy largely accounts for the empirical trend in Tc,max, resolving a long-standing contradiction with theoretical calculations.
PACS: 74.72.Gh – Hole-doped / 74.20.Pq – Electronic structure calculations / 74.62.-c – Transition temperature variations, phase diagrams
© EPLA, 2012
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