Volume 103, Number 6, September 2013
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||22 October 2013|
The synthesis and characterization of 1111-type diluted magnetic semiconductors (La1−xSrx)(Zn1−xTMx)AsO (TM = Mn, Fe, Co)
1 Department of Physics, Zhejiang University - Hangzhou 310027, China
2 Department of Physics, Hangzhou Normal University - Hangzhou 310016, China
3 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences Beijing 100190, China
4 Department of Physics, Columbia University - New York, NY 10027, USA
Received: 3 August 2013
Accepted: 23 September 2013
The doping effect of Sr and transition metals Mn, Fe, Co into the direct-gap semiconductor LaZnAsO has been investigated. Our results indicate that the single phase ZrCuSiAs-type tetragonal crystal structure is preserved in (La1−xSrx)(Zn1−xTMx)AsO (TM = Mn, Fe, Co) with the doping level up to . While the system remains semiconducting, doping with Sr and Mn results in ferromagnetic order with , and doping with Sr and Fe results in a spin-glass–like state below with a saturation moment of ∼0.02 μB/Fe, an order of magnitude smaller than the ∼0.4 μB/Mn of Sr- and Mn-doped samples. The same type of magnetic state is observed neither for (Zn,Fe) substitution without carrier doping, nor for Sr- and Co-doped specimens.
PACS: 75.50.Pp – Magnetic semiconductors / 75.50.Lk – Spin glasses and other random magnets / 75.30.Cr – Saturation moments and magnetic susceptibilities
© EPLA, 2013
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