Volume 107, Number 1, July 2014
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||08 July 2014|
The suppression of Curie temperature by Sr doping in diluted ferromagnetic semiconductor (La1−xSrx)(Zn1−yMny)AsO
1 Department of Physics, Zhejiang University - Hangzhou 310027, China
2 NIST center for Neutron Research, National Institute of Standards and Technology - Gaithersburg, MD 20899, USA
3 Department of Materials Science and Engineering, University of Maryland - College Park, MD 20742, USA
4 Department of Physics, Hangzhou Normal University - Hangzhou 310016, China
Received: 11 April 2014
Accepted: 14 June 2014
is a two-dimensional diluted ferromagnetic semiconductor that has the advantage of decoupled charge and spin doping. The substitution of Sr2+ for La3+ and Mn2+ for Zn2+ into the parent semiconductor LaZnAsO introduces hole carriers and spins, respectively. This advantage enables us to investigate the influence of carrier doping on the ferromagnetic ordered state through the control of Sr concentrations in . 10% Sr doping results in a ferromagnetic ordering below . Increasing Sr concentration up to 30% heavily suppresses the Curie temperature and saturation moments. Neutron scattering measurements indicate that no structural transition occurs for below 300 K.
PACS: 75.50.Pp – Magnetic semiconductors / 75.47.Lx – Magnetic oxides / 75.30.Cr – Saturation moments and magnetic susceptibilities
© EPLA, 2014
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