| Issue |
EPL
Volume 105, Number 1, January 2014
|
|
|---|---|---|
| Article Number | 17010 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/105/17010 | |
| Published online | 05 February 2014 | |
Quantum diffusion due to scattering non-locality in nanoscale semiconductors
Department of Applied Science and Technology, Politecnico di Torino - C.so Duca degli Abruzzi 24, 10129 Torino, Italy
Received: 10 October 2013
Accepted: 7 January 2014
In view of its local character, the semiclassical or Boltzmann theory is intrinsically unable to describe transport phenomena on ultrashort space and time scales, and to this purpose genuine quantum-transport approaches are imperative. By employing a density-matrix simulation strategy recently proposed, we shall demonstrate its power and flexibility in describing quantum-diffusion phenomena in nanoscale semiconductors. In particular, as for the case of carrier-carrier relaxation in photoexcited semiconductors, our analysis will show the failure of simplified dephasing models in describing phonon-induced scattering non-locality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.
PACS: 72.10.-d – Theory of electronic transport; scattering mechanisms / 73.63.-b – Electronic transport in nanoscale materials and structures / 85.35.-p – Nanoelectronic devices
© EPLA, 2014
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