Issue |
EPL
Volume 105, Number 4, February 2014
|
|
---|---|---|
Article Number | 47005 | |
Number of page(s) | 5 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/105/47005 | |
Published online | 04 March 2014 |
Experimental evidence for coherence resonance in a noise-driven GaAs/AlAs superlattice
1 Division of System Integration & IC Design, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences - 215123 Suzhou, PRC
2 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences - 215123 Suzhou, PRC
3 Paul-Drude-Institut für Festkörperelektronik - Hausvogteiplatz 5–7, 10117 Berlin, Germany
Received: 7 October 2013
Accepted: 10 February 2014
The presence of coherence resonance is experimentally identified in a doped, weakly coupled GaAs/AlAs superlattice (SL), which exhibits current self-oscillations when driven by noise. The physical mechanism is related to the interaction between the noise source and two oscillation modes of the SL oscillator: the well-to-well hopping mode and the dipole-motion mode. For a range of intermediate noise levels, the intrinsic oscillation mode of the SL oscillator, i.e. the well-to-well hopping mode, is activated, and the dipole motion is forced into a collective periodic oscillating state, resulting in coherence resonance.
PACS: 73.21.Cd – Superlattices / 72.70.+m – Noise processes and phenomena / 05.45.-a – Nonlinear dynamics and chaos
© EPLA, 2014
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