| Issue |
EPL
Volume 108, Number 1, October 2014
|
|
|---|---|---|
| Article Number | 17002 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/108/17002 | |
| Published online | 25 September 2014 | |
Single photon emission dynamics of InP-InGaP quantum dots under p-shell excitation
1 Departamento de Física de Materiales, Universidad Autónoma de Madrid, Unidad Asociada CSIC-SEMICUAM E-28049 Madrid, Spain
2 Laboratoire de Photonique et de Nanostructures, CNRS, UPR20 - Route de Nozay, 91460 Marcoussis, France
3 Instituto de Ciencia de Materiales “Nicolás Cabrera”, Universidad Autónoma de Madrid - Madrid 28049, Spain
4 Instituto de Microelectrónica de Madrid, Centro Nacional de Microelectrónica, CSIC - Isaac Newton 8, Tres Cantos, E-28760 Madrid, Spain
5 Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid - Madrid 28049, Spain
Received: 8 May 2014
Accepted: 11 September 2014
Single photon emitters based on InP/GaInP quantum dots have been studied under p-shell excitation by time-resolved photoluminescence and photon correlation spectroscopy. By tuning the excitation energy in resonance with quantum dot excited states, we observe a marked decrease of the antibunching time as a result of the increased excitation rate for decreasing energy detuning. A similar behavior is observed by increasing the pump power. The spectral dependence of the antibunching rate follows the energy profile of the excited state, as measured by photoluminescence excitation.
PACS: 78.55.Et – II-VI semiconductors / 85.35.Be – Quantum well devices (quantum dots, quantum wires, etc.) / 42.50.Ar – Photon statistics and coherence theory
© EPLA, 2014
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