Volume 108, Number 3, November 2014
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||05 November 2014|
Structure and band gap engineering of Fe-doped SrSnO3 epitaxial films
1 School of Physics and Electronic Information, Huaibei Normal University - Huaibei 235000, PRC
2 Institute of Solid State Physics, Chinese Academy of Science - Hefei 230031, PRC
Received: 13 August 2014
Accepted: 12 October 2014
(SSFO) films were epitaxially grown on MgO substrates by pulsed-laser deposition. X-ray diffraction, atomic force microcopy, and optical spectra investigations reveal that the lattice and band structure properties of the SSFO films can be modified significantly by varying the Fe content. With Fe content increasing from 0 to 1 in films, the lattice parameters decrease from 4.0425 to 3.8604 Å gradually, and the optical band gaps Eg decrease from 4.23 to 2.63 eV linearly. The Fe-induced large tuning in band gap was explained by the systematic width increase of the Fe-derived 3d band lying nearly above the O-derived 2p valence band.
PACS: 77.55.Px – Epitaxial and superlattice films / 91.60.Mk – Optical properties / 73.20.At – Surface states, band structure, electron density of states
© EPLA, 2014
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