Volume 108, Number 3, November 2014
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||04 November 2014|
Gate-controlled supercurrent reversal in MoS2-based Josephson junctions
Department of Physics, Institute for Advanced Studies in Basic Sciences (IASBS) - Zanjan 45137-66731, Iran
Received: 19 July 2014
Accepted: 13 October 2014
Motivated by recent experiments revealing superconductivity in , we investigate the Josephson effect in the monolayer in the presence of an exchange splitting. We show that the supercurrent reversal known as transition can occur by varying the doping via gate voltages. This is in contrast to common superconductor/ferromagnet/superconductor junctions in which successive transitions take place with the variation of junction length or temperature. In fact for the case of we find that both the amplitude and the period of oscillations show a dependence on the doping which explains the predicted doping-induced supercurrent reversal. These effects comes from the dependence of density and Fermi velocity on the doping strength beside the intrinsic spin-splitting in the valence band which originates from spin-orbit interaction.
PACS: 74.50.+r – Tunneling phenomena; Josephson effects / 74.45.+c – Proximity effects; Andreev reflection; SN and SNS junctions / 73.63.-b – Electronic transport in nanoscale materials and structures
© EPLA, 2014
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