Volume 108, Number 3, November 2014
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||12 November 2014|
Superconducting properties of indium-doped topological crystalline insulator SnTe
School of Physical Sciences, Jawaharlal Nehru University - New Delhi, India
Received: 20 June 2014
Accepted: 20 October 2014
We report on the superconducting properties of indium-doped SnTe. SnTe has recently been explored as a topological crystalline insulator. Single crystals of Sn0.5In0.5Te have been synthesized by a modified Bridgman method. Resistivity measurement performed in the range 1.6–300 K shows a metallic normal state with onset of superconducting transition at . Bulk superconductivity has also been confirmed by DC magnetization, AC susceptibility and rf penetration depth measurements. Zero-temperature upper critical field, lower critical field, coherence length, and penetration depth are estimated to be 1.6 T, 1 mT, 143.5 Å and 853 nm, respectively. The temperature dependence of the low-temperature penetration depth indicates S-wave fully gapped characteristics with BCS (Bardeen-Cooper-Schrieffer) gap . Hall and Seebeck coefficient measurements confirm the dominance of hole conduction with possible phonon-drag effects around . Resistive transition studied under applied magnetic field shows thermally activated flux flow behaviour.
PACS: 74.25.-q – Properties of superconductors / 74.25.Ha – Magnetic properties including vortex structures and related phenomena / 73.20.-r – Electron states at surfaces and interfaces
© EPLA, 2014
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