Volume 108, Number 3, November 2014
|Number of page(s)
|Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
|12 November 2014
Superconducting properties of indium-doped topological crystalline insulator SnTe
School of Physical Sciences, Jawaharlal Nehru University - New Delhi, India
Received: 20 June 2014
Accepted: 20 October 2014
We report on the superconducting properties of indium-doped SnTe. SnTe has recently been explored as a topological crystalline insulator. Single crystals of Sn0.5In0.5Te have been synthesized by a modified Bridgman method. Resistivity measurement performed in the range 1.6–300 K shows a metallic normal state with onset of superconducting transition at . Bulk superconductivity has also been confirmed by DC magnetization, AC susceptibility and rf penetration depth measurements. Zero-temperature upper critical field, lower critical field, coherence length, and penetration depth are estimated to be 1.6 T, 1 mT, 143.5 Å and 853 nm, respectively. The temperature dependence of the low-temperature penetration depth indicates S-wave fully gapped characteristics with BCS (Bardeen-Cooper-Schrieffer) gap . Hall and Seebeck coefficient measurements confirm the dominance of hole conduction with possible phonon-drag effects around . Resistive transition studied under applied magnetic field shows thermally activated flux flow behaviour.
PACS: 74.25.-q – Properties of superconductors / 74.25.Ha – Magnetic properties including vortex structures and related phenomena / 73.20.-r – Electron states at surfaces and interfaces
© EPLA, 2014
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.