Volume 108, Number 3, November 2014
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||11 November 2014|
Optical and electronic structure of quasi-freestanding multilayer graphene on the carbon face of SiC
1 Singapore Synchrotron Light Source, National University of Singapore - 5 Research Link, Singapore 117603, Singapore
2 NUSNNI- NanoCore, National University of Singapore - Singapore 117576, Singapore
3 Department of Physics, National University of Singapore - Singapore 117542, Singapore
4 Graphene Research Centre, Faculty of Science, National University of Singapore - Singapore 117546, Singapore
5 Department of Chemistry, National University of Singapore - Singapore 117543, Singapore
6 Jurusan Fisika, FMIPA, Universitas Gadjah Mada - BLS 21 Yogyakarta 55281, Indonesia
Received: 3 June 2014
Accepted: 5 October 2014
We report the optical and electronic properties of multilayer graphene films grown epitaxially on the carbon face (C-face) of 4H-SiC probed using spectroscopic ellipsometry (SE) and angle-resolved photoemission spectroscopy (ARPES). The optical conductivity in the energy range from 1.0 to 5.3 eV extracted from SE reveals two important features: the presence of universal conductivity at the near-infrared region and asymmetric resonant excitons at 4.5 eV. Furthermore, ARPES shows the presence of independent linear electronic dispersion. These features resemble quasi-freestanding properties of multilayer graphene grown on the C-face of SiC.
PACS: 73.22.Pr – Electronic structure of graphene / 78.67.Wj – Optical properties of graphene / 07.60.Fs – Polarimeters and ellipsometers
© EPLA, 2014
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