Volume 109, Number 3, February 2015
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||19 February 2015|
The line-defect–induced valley filter in strained graphene
Department of Physics, Jilin University - Changchun 130012, China
Received: 8 December 2014
Accepted: 29 January 2015
We theoretically demonstrate that a kind of extended line defect, an experimentally available topological defect in graphene lattice, can induce one-dimensional boundary states. And in the presence of the pseudomagnetic field generated by an inhomogeneous strain, such boundary states are valley chiral in the sense of electronic propagation direction being locked to its valley degree of freedom. Based on such an electronic characteristic, we further show that when the line defect is embedded in the strained graphene strip, the valley filtering and valley valve functions can be realized in the electronic transport process. Therefore, we argue that the line defect can play a key role in the field of graphene valleytronics, instead of a zigzag-edged graphene nanoribbon.
PACS: 73.22.Pr – Electronic structure of graphene / 85.35.-p – Nanoelectronic devices / 73.63.-b – Electronic transport in nanoscale materials and structures
© EPLA, 2015
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