| Issue |
EPL
Volume 109, Number 4, February 2015
|
|
|---|---|---|
| Article Number | 47007 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/109/47007 | |
| Published online | 05 March 2015 | |
The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice
1 REC “Nonlinear Dynamics of Complex Systems”, Saratov State Technical University - Politechnicheskaja 77, Saratov 410028, Russia
2 Faculty of Nonlinear Processes, Saratov State University - Astrakhanskaya 83, Saratov, 410012, Russia
3 Department of Physics, Loughborough University - Loughborough LE11 3TU, UK
Received: 20 December 2014
Accepted: 10 February 2015
This letter focuses on the analysis of the spatio-temporal dynamics of charge domains in strongly coupled semiconductor superlattices with the Ohmic emitter and collector contacts. Our numerical simulations, based on the semiclassical approximation of the electron transport, show that the collector doping can dramatically affect the charge dynamics in the semiconductor structure and, therefore, the output AC power. We demonstrate that the appropriately chosen doping of the collector contacts can considerably increase the power of the generated signal.
PACS: 73.21.-b – Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems / 05.45.-a – Nonlinear dynamics and chaos / 72.20.Ht – High-field and nonlinear effects
© EPLA, 2015
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