| Issue |
EPL
Volume 110, Number 4, May 2015
|
|
|---|---|---|
| Article Number | 47004 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/110/47004 | |
| Published online | 04 June 2015 | |
Ultra-fast carriers relaxation in bulk silicon following photo-excitation with a short and polarized laser pulse
Istituto di Struttura della Materia (C.N.R.) - Via Salaria Km 29.3, I-00016 Montelibretti (Roma), Italy and European Theoretical Spectroscopy Facilities (ETSF)
Received: 30 March 2015
Accepted: 12 May 2015
We use an atomistic approach to provide a novel and ground-breaking interpretation of the ultra-fast carriers relaxation in a realistic material: bulk silicon. By comparing the results of ab initio simulations with recent two-photon photo-emission measurements we show that the description of the carrier relaxation in terms of 
inter-valley scattering is not correct. The ultra-fast dynamics measured experimentally is, instead, due to the scattering between degenerate L states that is activated by the non-symmetric population of the conduction bands induced by the laser field. This ultra-fast relaxation is, then, entirely due to the specific experimental setup and it can be interpreted by introducing a novel definition of the quasi-particle lifetimes in an out-of-equilibrium context.
PACS: 78.47.J- – Ultrafast spectroscopy (<1 psec) / 31.15.A- – Ab initio / 78.47.D- – Time resolved spectroscopy (>1 psec)
© EPLA, 2015
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