Volume 110, Number 4, May 2015
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||04 June 2015|
Ultra-fast carriers relaxation in bulk silicon following photo-excitation with a short and polarized laser pulse
Istituto di Struttura della Materia (C.N.R.) - Via Salaria Km 29.3, I-00016 Montelibretti (Roma), Italy and European Theoretical Spectroscopy Facilities (ETSF)
Received: 30 March 2015
Accepted: 12 May 2015
We use an atomistic approach to provide a novel and ground-breaking interpretation of the ultra-fast carriers relaxation in a realistic material: bulk silicon. By comparing the results of ab initio simulations with recent two-photon photo-emission measurements we show that the description of the carrier relaxation in terms of inter-valley scattering is not correct. The ultra-fast dynamics measured experimentally is, instead, due to the scattering between degenerate L states that is activated by the non-symmetric population of the conduction bands induced by the laser field. This ultra-fast relaxation is, then, entirely due to the specific experimental setup and it can be interpreted by introducing a novel definition of the quasi-particle lifetimes in an out-of-equilibrium context.
PACS: 78.47.J- – Ultrafast spectroscopy (<1 psec) / 31.15.A- – Ab initio / 78.47.D- – Time resolved spectroscopy (>1 psec)
© EPLA, 2015
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.