Erratum: Ultra-fast carriers relaxation in bulk silicon following photo-excitation with a short and polarized laser pulse
Istituto di Struttura della Materia (C.N.R.) - Via Salaria Km 29.3, I-00016 Montelibretti (Roma), Italy and European Theoretical Spectroscopy Facilities (ETSF)
Received: 27 February 2017
Accepted: 27 February 2017
Original article: EPL, 110 (2015) 47004.
PACS: 99.10.Cd – Errata
© EPLA, 2017