Volume 110, Number 6, June 2015
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||30 June 2015|
Correlation of crystal quality and extreme magnetoresistance of WTe2
1 Department of Chemistry, Princeton University - Princeton, NJ 08544, USA
2 Joseph Henry Laboratories and Department of Physics, Princeton University - Princeton, NJ 08544, USA
Received: 16 June 2015
Accepted: 17 June 2015
High-quality single crystals of WTe2 were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher-quality single crystals than are typically obtained via halide-assisted vapor transport methods. Magnetoresistance (MR) values at 9 tesla and 2 kelvin as high as 1.75 million %, nearly an order of magnitude higher than previously reported for this material, were obtained on crystals with residual resistivity ratio (RRR) of approximately 1250. The MR follows a near B2 law and, assuming a semiclassical model, the average carrier mobility for the highest-quality crystal was found to be at 2 K. A correlation of RRR, MR ratio and average carrier mobility is found with the cooling rate during the flux growth.
PACS: 72.15.Gd – Galvanomagnetic and other magnetotransport effects / 71.55.Ak – Metals, semimetals, and alloys / 61.72.Cc – Kinetics of defect formation and annealing
© EPLA, 2015
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