| Issue |
EPL
Volume 110, Number 6, June 2015
|
|
|---|---|---|
| Article Number | 67002 | |
| Number of page(s) | 4 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/110/67002 | |
| Published online | 30 June 2015 | |
Correlation of crystal quality and extreme magnetoresistance of WTe2
1 Department of Chemistry, Princeton University - Princeton, NJ 08544, USA
2 Joseph Henry Laboratories and Department of Physics, Princeton University - Princeton, NJ 08544, USA
Received: 16 June 2015
Accepted: 17 June 2015
High-quality single crystals of WTe2 were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher-quality single crystals than are typically obtained via halide-assisted vapor transport methods. Magnetoresistance (MR) values at 9 tesla and 2 kelvin as high as 1.75 million %, nearly an order of magnitude higher than previously reported for this material, were obtained on crystals with residual resistivity ratio (RRR) of approximately 1250. The MR follows a near B2 law 
and, assuming a semiclassical model, the average carrier mobility for the highest-quality crystal was found to be 
at 2 K. A correlation of RRR, MR ratio and average carrier mobility 
is found with the cooling rate during the flux growth.
PACS: 72.15.Gd – Galvanomagnetic and other magnetotransport effects / 71.55.Ak – Metals, semimetals, and alloys / 61.72.Cc – Kinetics of defect formation and annealing
© EPLA, 2015
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.