Magnetoresistance and Shubnikov-de Haas oscillation in YSb

Department of Physics, Renmin University of China - Beijing 100872, PRC and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China Beijing 100872, PRC

^(b) tlxia@ruc.edu.cn (corresponding author)

Received: 4 March 2017
Accepted: 10 August 2017

Abstract

YSb crystals are grown and the transport properties under magnetic field are measured. The resistivity exhibits metallic behavior under zero magnetic field and the low-temperature resistivity shows a clear upturn once a moderate magnetic field is applied. The upturn is greatly enhanced by increasing magnetic field. At low temperature (2.5 K) and high field (14 T), the transverse magnetoresistance (MR) is quite large . In addition, the Shubnikov-de Haas (SdH) oscillation has also been observed in YSb. The possible trivial Berry phase extracted from the SdH oscillation, the band structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrate that YSb is a topologically trivial material. The extremely large MR (XMR) in YSb may originate from the electron-hole compensation.