Volume 111, Number 2, July 2015
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||11 August 2015|
Superconductivity enhanced by Se doping in Eu3Bi2(S,Se)4F4
1 Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University Hangzhou 310027, China
2 Department of Physics, Hangzhou Normal University - Hangzhou 310036, China
3 Collaborative Innovation Centre of Advanced Microstructures - Nanjing 210093, China
Received: 17 May 2015
Accepted: 11 July 2015
We investigated the negative-chemical-pressure effect of Eu3Bi2S4−xSexF4 (0 ≤ x ≤ 2.0) by the partial substitution of S with Se. The crystalline lattice substantially expands as Se is doped, suggesting an effective negative chemical pressure. With Se/S doping, the charge-density-wave–like anomaly is suppressed, and meanwhile the superconducting transition temperature is enhanced. For , Tc reaches 3.35 K and bulk superconductivity is confirmed by the strong diamagnetic signal, with shielding volume fraction over 90%. Magnetic-susceptibility, specific-heat and Hall-effect measurements reveal that the Se/S doping increases the carrier density, corresponding to the increase of the average Eu valence. Our work provides a rare paradigm of negative-chemical-pressure effect.
PACS: 74.70.Xa – Pnictides and chalcogenides / 74.62.Bf – Effects of material synthesis, crystal structure, and chemical composition / 74.62.-c – Transition temperature variations, phase diagrams
© EPLA, 2015
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