Issue |
EPL
Volume 122, Number 1, April 2018
|
|
---|---|---|
Article Number | 17004 | |
Number of page(s) | 6 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/122/17004 | |
Published online | 05 June 2018 |
Superconductivity in La1−xCex OBiSSe: Carrier doping by mixed valence of Ce ions
1 Department of Physics, Tokyo Metropolitan University - Hachioji 192-0397, Japan
2 Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology 4259 Nagatsuta, Midori, Yokohama, 226-8503, Japan
3 PRESTO, Japan Science and Technology Agency - 7 Gobancho, Chiyoda, Tokyo, 102-0076, Japan
(a) y_goto@tmu.ac.jp
Received: 20 March 2018
Accepted: 11 May 2018
We report the effects of Ce substitution on the structural, electronic, and magnetic properties of the layered bismuth-chalcogenide La1−xCexOBiSSe , which are newly obtained in this study. Metallic conductivity was observed for because of electron carriers induced by mixed valence of Ce ions, as revealed by the bond valence sum calculation and magnetization measurements. Zero resistivity and clear diamagnetic susceptibility were obtained for , indicating the emergence of bulk superconductivity in these compounds. Dome-shaped superconductivity phase diagram with the highest transition temperature of 3.1 K, which is slightly lower than that of F-doped LaOBiSSe , was established. The present study clearly shows that the mixed valence of Ce ions can be utilized as an alternative approach for electron-doping in layered bismuth-chalcogenides to induce superconductivity.
PACS: 74.25.F- – Transport properties / 74.25.Dw – Superconductivity phase diagrams / 72.15.-v – Electronic conduction in metals and alloys
© EPLA, 2018
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