Volume 111, Number 3, August 2015
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||01 September 2015|
Band inversion at critical magnetic fields in a silicene quantum dot
1 Departamento de Física Atómica, Molecular y Nuclear, Universidad de Granada - Fuentenueva s/n, 18071 Granada, Spain
2 Instituto Carlos I de Física Teórica y Computacional, Universidad de Granada - 18071 Granada, Spain
3 Departamento de Matemática Aplicada, Universidad de Granada - Fuentenueva s/n, 18071 Granada, Spain
Received: 24 June 2015
Accepted: 27 July 2015
We have found out that the band inversion in a silicene quantum dot (QD), in perpendicular magnetic B and electric fields, drastically depends on the strength of the magnetic field. We study the energy spectrum of the silicene QD where the electric field provides a tunable band gap Δ. Boundary conditions introduce chirality, so that negative and positive angular-momentum m zero Landau level (ZLL) edge states show a quite different behavior regarding the band-inversion mechanism underlying the topological insulator transition. We show that, whereas some ZLLs suffer band inversion at for any B > 0, other ZLLs only suffer band inversion above critical values of the magnetic field at nonzero values of the gap.
PACS: 73.63.Kv – Quantum dots / 03.65.Pm – Relativistic wave equations / 03.65.Vf – Phases: geometric; dynamic or topological
© EPLA, 2015
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