Volume 111, Number 3, August 2015
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||25 August 2015|
Controllable valley and spin-polarized transport and negative magnetoresistance in a silicene junction
College of Science, Nanjing University of Aeronautics and Astronautics - Jiangsu 210016, China
Received: 19 March 2015
Accepted: 27 July 2015
We investigate the valley and spin-resolved transport through a ferromagnetic/ferromagnetic/ferromagnetic silicene junction. For the normal silicene junction with zero exchange field in the presence of photo-irradiation, we observe a 100% valley/spin polarization by modulating the energy E. By enhancing the strength of the photo-irradiation or the gate voltage in the middle layer VM, a 100% spin and large valley polarization can be found. If the staggered exchange field is considered instead of the photo-irradiation, by tuning E a fully polarized valley/spin transport is demonstrated. By tuning the staggered exchange field or VM, a 100% valley and large spin polarization can be seen. In the ferromagnetic/normal/ferromagnetic junction, depending on the polarized direction of the circularly polarized light, a large negative or positive magnetoresistance can be obtained. The results obtained here can be explained by the band structures of the device.
PACS: 73.23.-b – Electronic transport in mesoscopic systems / 72.25.Dc – Spin polarized transport in semiconductors / 85.75.-d – Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
© EPLA, 2015
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