Volume 111, Number 6, September 2015
|Number of page(s)||5|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||02 October 2015|
New spin injection scheme based on spin gapless semiconductors: A first-principles study
1 State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences - Beijing 100190, PRC
2 College of Physics, Jilin University - Changchun 130023, PRC
3 School of Material Science and Engineering, Hebei University of Technology - Tianjin 300130, PRC
(a) firstname.lastname@example.org (corresponding author)
Received: 14 January 2015
Accepted: 11 September 2015
Spin injection efficiency based on a conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch; here we proposed that by replacing the metallic injectors with spin gapless semiconductors can significantly reduce the conductive mismatch to enhance spin injection efficiency. By performing first-principles calculations based on superlattice structure, we have studied a representative system of Mn2CoAl/semiconductor spin injector scheme. The results showed that a high spin polarization was maintained at the interface in systems of Mn2CoAl/Fe2VAl constructed with (100) interface and Mn2CoAl/GaAs with (110) interface, and the latter is expected to possess long spin diffusion length. Inherited from the spin gapless feature of Mn2CoAl, a pronounced dip was observed around the Fermi level in the majority spin density of states in both systems, suggesting fast transport of the low-density carriers.
PACS: 85.75.-d – Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields / 75.70.Cn – Magnetic properties of interfaces (multilayers, superlattices, heterostructures) / 73.20.At – Surface states, band structure, electron density of states
© EPLA, 2015
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