Volume 113, Number 1, January 2016
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||29 January 2016|
A phase diagram for band inversion of topological materials as a function of interactions between two involved bands
Surface Physics Laboratory (National Key Laboratory), Key Laboratory of Computational Physical Sciences (MOE), Department of Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University Shanghai 200433, PRC
(a) email@example.com (corresponding author)
Received: 19 October 2015
Accepted: 14 January 2016
Basing on first-principles calculations, we predicate that Bi on a graphene derivative, g-C14N3, which involves a 3 × 3 unit cell of graphene with four C atoms substituted by three N atoms, is a topological insulator with a gap of 50 meV. With the help of maximally localized Wannier functions, we find that its band inversion gap can be determined by examining a pair of interaction parameters between the two involved bands. Accordingly, a phase diagram for band inversion of topological materials as a function of the interactions is obtained. The conclusion also holds for Sb, Ir and Rh on g-C14N3. These materials are topological nontrivial either insulator or semimetal, indicating that g-C14N3 is a good platform for conceiving topological materials.
PACS: 73.43.-f – Quantum Hall effects / 71.70.Ej – Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect / 73.22.Pr – Electronic structure of graphene
© EPLA, 2016
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