Volume 113, Number 6, March 2016
|Number of page(s)||6|
|Published online||18 April 2016|
High-performance diamond radiation detectors produced by lift-off method
1 Graduate School of Engineering, Hokkaido University - Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
2 Research Institute for Electronics and Photonics, National Institute of Advanced Industrial Science and Technology 1-1-1 Higashi, Tsukuba 305-8562, Ibaraki, Japan
3 Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST) 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
Received: 28 January 2016
Accepted: 4 April 2016
For stable semiconductor detector operation under harsh environments, an ideal single-crystal diamond without a charge trapping centre is required. For this study, a self-standing single-crystal CVD diamond was fabricated using a lift-off method. The reduction of charge trapping factors such as structural defects, point defects, and nitrogen impurities, was attempted using 0.2% of low-methane concentration growth and using a full metal seal chamber. A high-quality self-standing diamond with strong free-exciton recombination emission was obtained. Charge collection efficiencies were 100.1% for holes and 99.8% for electrons, provided that and . Energy resolutions were 0.38% for both holes and electrons. We produced a high-performance diamond radiation detector using the productive lift-off method.
PACS: 29.40.Wk – Solid-state detectors / 81.05.ug – Diamond
© EPLA, 2016
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