Volume 114, Number 4, May 2016
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||23 June 2016|
Dielectric dynamics of the polycrystalline Ba0.5Sr0.5TiO3 thin films
1 Jožef Stefan Institute - Jamova cesta 39, SI-1000 Ljubljana, Slovenia
2 Jožef Stefan International Postgraduate School - Jamova cesta 39, SI-1000 Ljubljana, Slovenia
3 Faculty of Physics, Vilnius University - 10222 Vilnius, Lithuania
4 School of Electronic and Information Engineering, Xi'an Jiaotong University - 28 XianNing West, Xi'an 710049, China
5 CEA Grenoble, LETI, Minatec Campus - 17 Rue des Martyrs, F-38054 Grenoble, France
(a) Present address: IPDiA - 2 Rue de la Girafe, F-14000 Caen, France; firstname.lastname@example.org
Received: 17 March 2016
Accepted: 27 May 2016
Polycrystalline Ba0.5Sr0.5TiO3 films, with thicknesses between 90 and 600 nm, were prepared on alumina substrates at 900 °C by chemical solution deposition (CSD) and a dielectric spectroscopy investigation of the in-plane properties was performed. The 5-kHz permittivity ε′ shows a non-monotonic thickness dependence, reaching 1230 at room temperature for the 310-nm-thick film, whose grain size is ∼75 nm. Its 15-GHz-value and losses are 1105 and 0.05, respectively. The temperature of the permittivity maximum Tmax at 5 kHz decreases with increasing thickness from 277 to 250 K for the 170- and 600-nm-thick films, respectively, which has been linked to the residual biaxial stress. A hysteresis is observed in the permittivity ε′-electric field EDC characteristics in all the films up to ∼50 K above Tmax. Frequency dispersion in which permittivity decreases with increasing frequency is present below Tmax in films thicker than 90 nm. The high permittivity values of the thinnest films, which are among the highest reported in the (Ba,Sr)TiO3 films with grain sizes below 75 nm, are a direct proof of the optimized CSD processing conditions.
PACS: 77.22.Ch – Permittivity (dielectric function) / 77.55.fe – BaTiO3-based films / 77.22.Gm – Dielectric loss and relaxation
© EPLA, 2016
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