Volume 116, Number 6, December 2016
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||06 February 2017|
Oxygen-deficient GdK2Nb5O15 ferroelectric epitaxial thin film
1 LPMC, Université de Picardie Jules Verne - 33 rue Saint Leu, 80039 Amiens Cedex, France
2 IM2NP, Université du Sud Toulon Var - Ave. de l'Univ., 83957 La Garde cedex, France
Received: 28 December 2016
Accepted: 25 January 2017
The ferroelectric compound GdK2Nb5O15 (GKN) thin film with tetragonal-tungsten-bronze–type structure was grown by pulsed-laser deposition on (001)SrRuO3/La0.5Sr0.5CoO3/MgO substrate. Using X-ray diffraction analysis we demonstrate that the phase transition temperature in the GKN thin film was shifted to high temperatures due to substrate-induced stress. Impedance spectroscopy investigations show Maxwell-Wagner–type conduction at low frequencies, which leads to resistive switching. Oxygen vacancies and temperature effects were studied to highlight the stability of the resistive switching behavior in the GKN thin film.
PACS: 77.55.Px – Epitaxial and superlattice films / 77.22.Ch – Permittivity (dielectric function) / 61.05.cp – X-ray diffraction
© EPLA, 2016
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