Volume 117, Number 4, February 2017
|Number of page(s)||4|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||18 April 2017|
Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature
1 Institute of Physics and University of Chinese Academy of Sciences - Beijing 100190, China
2 Department of Chemistry, Princeton University - Princeton, NJ 08544, USA
3 Shanghai Synchrotron Radiation Facilities, Shanghai Institute of Applied Physics, Chinese Academy of Sciences Shanghai 201204, China
4 Collaborative Innovation Center of Quantum Matter - Beijing, 100190, China
5 University of Chinese Academy of Sciences - Beijing 100190, China
Received: 16 December 2016
Accepted: 31 March 2017
We report high-pressure studies of the structural stability of Ru2Sn3, a new type of three-dimensional topological insulator (3D-TI) with unique quasi–one-dimensional Dirac electron states throughout the surface Brillouin zone of its one-atmosphere low-temperature orthorhombic form. Our in-situ high-pressure synchrotron x-ray diffraction and electrical resistance measurements reveal that upon increasing pressure the tetragonal-to-orthorhombic phase shifts to higher temperature. We find that the stability of the orthorhombic phase that hosts the non-trivial topological ground state can be pushed up to room temperature by an applied pressure of ∼ 20 GPa. This is in contrast with the commonly known 3D-TIs whose ground state is usually destroyed under pressure. Our results indicate that pressure provides a possible pathway for realizing a room temperature topological insulating state in Ru2Sn3.
PACS: 62.50.-p – High-pressure effects in solids and liquids / 61.05.cp – X-ray diffraction
© EPLA, 2017
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