Volume 118, Number 2, April 2017
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||20 June 2017|
Effect of edge vacancies on performance of planar graphene tunnel field-effect transistor
1 Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research Dubna 141980, Moscow region, Russia
2 Moscow Institute of Physics and Technology - Dolgoprudny 141700, Moscow region, Russia
Received: 13 April 2017
Accepted: 8 June 2017
The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are performed by using the Green's function method and the tight-binding approximation. It is shown that the transistor performance depends critically on two important factors associated with the defects: the destruction of the edge-localized electronic states and the emergence of subpeaks near the Fermi level. The supportable operation conditions of the TFET are found to be ensured at 30 percent or less of edge vacancies regardless of the type of their distribution.
PACS: 72.80.Vp – Electronic transport in graphene
© EPLA, 2017
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