| Issue |
EPL
Volume 119, Number 3, August 2017
|
|
|---|---|---|
| Article Number | 37004 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/119/37004 | |
| Published online | 25 October 2017 | |
Spectroscopic signatures for the dark Bose-Einstein condensation of spatially indirect excitons
1 Sorbonne Université UPMC, CNRS-UMR 7588, Institut des NanoSciences de Paris - 4 Place Jussieu F-75005 Paris, France
2 ICFO-Institut de Ciencies Fotonicas, The Barcelona Institute of Science and Technology 06880 Castelldefels, Spain
3 Laboratoire de Photonique et Nanostructures, LPN/CNRS - Route de Nozay, F-91460 Marcoussis, France
Received: 6 October 2017
Accepted: 11 October 2017
We study semiconductor excitons confined in an electrostatic trap of a GaAs bilayer heterostructure. We evidence that optically bright excitonic states are strongly depleted while cooling to sub-kelvin temperatures. In return, the other accessible and optically dark states become macroscopically occupied so that the overall exciton population in the trap is conserved. These combined behaviours constitute the spectroscopic signature for the mostly dark Bose-Einstein condensation of excitons, which in our experiments is restricted to a dilute regime within a narrow range of densities, below a critical temperature of about 1 K.
PACS: 73.63.Hs – Quantum wells / 78.47.jd – Time resolved luminescence / 03.75.Hh – Static properties of condensates; thermodynamical, statistical, and structural properties
© EPLA, 2017
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