Issue |
EPL
Volume 110, Number 2, April 2015
|
|
---|---|---|
Article Number | 27001 | |
Number of page(s) | 5 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/110/27001 | |
Published online | 01 May 2015 |
Long-lived spin coherence of indirect excitons in GaAs coupled quantum wells
1 ICFO-The Institute of Photonic Sciences - Av. Carl Friedrich Gauss, num. 3, 08860 Castelldefels, Spain
2 Laboratoire de Photonique et Nanostructures, LPN/CNRS - Route de Nozay, 91460 Marcoussis, France
3 Institut des Nanosciences de Paris, CNRS and UPMC - 4 pl. Jussieu, 75005 Paris, France
(a) francois.dubin@insp.jussieu.fr
Received: 30 January 2015
Accepted: 7 April 2015
We study spatially indirect excitons confined in a symmetric GaAs double quantum well. We show that the spin polarisation of very dilute gases can be optically imprinted, in both pure and superposition states. In the regime where indirect excitons can be localized, we observe at 350 mK that the excitons spin degree of freedom is frozen with a relaxation time comparable to the coherence time and to the radiative lifetime .
PACS: 73.63.Hs – Quantum wells / 78.47.jd – Time resolved luminescence
© EPLA, 2015
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