Volume 120, Number 3, November 2017
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||19 January 2018|
Crystal growth and magneto-transport properties of α-ZrSb2 and α-HfSb2
Department of Physics, Renmin University of China - Beijing 100872, PRC and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China Beijing 100872, PRC
Received: 13 November 2017
Accepted: 4 January 2018
We report the synthesis of single crystals of α-ZrSb2/α-HfSb2 and their magneto-transport properties. Both of α-ZrSb2 and α-HfSb2 exhibit metallic behavior. The T3 behavior of zero-field resistivity for both compounds below 30 K indicates interband electron-phonon scattering. The magnetoresistance (MR) is found to obey Kohler's rule for ZrSb2 while the MR of HfSb2 deviates from this rule. A possible explanation for the results of Kohler's plot is considered, which is confirmed with the results of the Hall effect. The positive linear Hall resistivity of ZrSb2 suggests hole-type carriers and a mobility of , while the existence of two types of carriers in HfSb2 is confirmed from the nonlinear Hall resistivity.
PACS: 75.47.-m – Magnetotransport phenomena; materials for magnetotransport / 72.15.Eb – Electrical and thermal conduction in crystalline metals and alloys
© EPLA, 2018
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