Volume 121, Number 6, March 2018
|Number of page(s)||5|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||15 May 2018|
Comparison between silicon and single-crystal diamond photodiodes for localized pulsed fast neutron detection
1 Università degli Studi di Roma Tor Vergata, Dipartimento di Ingegneria Industriale - via del Politecnico 1, I-00133, Rome, Italy
2 S. P. Platt & Co. Ltd. - Preston, UK
3 Science and technology Facilities Council, ISIS spallation neutron source - Chilton, Didcot, Oxfordshire, OQX11, UK
4 ENEA Department of Fusion and Technologies for Nuclear Safety and Security - via E. Fermi 45, I-00044, Frascati (Rome), Italy
Received: 28 February 2018
Accepted: 20 April 2018
Experimental measurements are presented, devoted to the cross-comparison of two small-size fast neutron detection devices, namely Single-Crystal Diamond diode (SCDD) and Silicon Photodiode (SiPD). Neutron time-of-flight spectra are simultaneously recorded under the same experimental conditions, using an array composed of two SCDDs and two SiPDs placed in the incident beam of the ROTAX beam line at the ISIS spallation neutron source (UK). Experimental spectra are compared to calculated ones, obtained by taking into account material characteristics and the neutron spectrum. The SCDD detector features a higher time resolution with respect to the SiPD, likely related to the different neutron cross-sections and the electronic thresholds set during the measurements.
PACS: 85.30.-z – Semiconductor devices / 29.40.-n – Radiation detectors / 28.52.Lf – Components and instrumentation
© EPLA, 2018
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