The resistive switching behaviors of a flexible device based on a SrTiO₃film

¹ Key Laboratory of Low-dimensional Materials and Application Technology, School of Materials Science and Engineering, Xiangtan University - Hunan Xiangtan 411105, China
² Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangdong Guangzhou 510610, China

^(b) houpf@xtu.edu.cn (corresponding author)
^(c) jbwang@xtu.edu.cn (corresponding author)

Received: 15 June 2019
Accepted: 15 July 2019

Abstract

Resistive switching devices are currently the best candidates realizing high-density flexible electronics for artificial intelligence because of simple structures, high density, high speed, and low-power consumption. However, few resistive switching devices contain both short-term memory and long-term memory behaviors for the cells connecting control system and machinery parts in artificial intelligence. Here, we report a SrTiO₃-based flexible device with mica substrate, in which both short-term and long-term memory behaviors can be achieved. In the effect of a suitable operation, the device can be switched from a short-term memory device to a total long-term memory device. The ON/OFF state of the long-term memory behavior can be stable more than when the device is flat or with bending radius of 4 mm, 6 mm and 8 mm. The results may promote the investigation of the resistive switching devices for high-density flexible electronics with special function.