Volume 127, Number 2, July 2019
|Number of page(s)||6|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||28 August 2019|
The resistive switching behaviors of a flexible device based on a SrTiO3film
1 Key Laboratory of Low-dimensional Materials and Application Technology, School of Materials Science and Engineering, Xiangtan University - Hunan Xiangtan 411105, China
2 Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangdong Guangzhou 510610, China
Received: 15 June 2019
Accepted: 15 July 2019
Resistive switching devices are currently the best candidates realizing high-density flexible electronics for artificial intelligence because of simple structures, high density, high speed, and low-power consumption. However, few resistive switching devices contain both short-term memory and long-term memory behaviors for the cells connecting control system and machinery parts in artificial intelligence. Here, we report a SrTiO3-based flexible device with mica substrate, in which both short-term and long-term memory behaviors can be achieved. In the effect of a suitable operation, the device can be switched from a short-term memory device to a total long-term memory device. The ON/OFF state of the long-term memory behavior can be stable more than when the device is flat or with bending radius of 4 mm, 6 mm and 8 mm. The results may promote the investigation of the resistive switching devices for high-density flexible electronics with special function.
PACS: 68.37.-d – Microscopy of surfaces, interfaces, and thin films / 73.50.-h – Electronic transport phenomena in thin films / 73.23.-b – Electronic transport in mesoscopic systems
© EPLA, 2019
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