Volume 128, Number 3, November 2019
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||10 January 2020|
Topological phase transition of Bi2–xInxTe3
1 Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University - Shanghai 200240, China
2 Laboratory of Functional Molecules and Materials, School of Physics and Optoelectronic Engineering, Shandong University of Technology - 266 Xincun Xi Road, Zibo, 255000, China
3 Tsung-Dao Lee Institute, Shanghai Jiao Tong University - Shanghai 200240, China
Received: 30 August 2019
Accepted: 15 November 2019
Compared with Bi2Se3 with its Dirac point in the bulk gap, the Dirac point of Bi2Te3 is in the valence band, then it is generally considered that it is difficult to observe the topological phase transition course in the Bi2Te3 system via nonmagnetic lighter element doping. Here, we report the phase transition of Bi2–xInxTe3, from a topological insulator to a trivial band insulator observed by angle-resolved photoemission spectroscopy. The robust surface state exists in the range of . At , the surface state completely disappears and only the bulk gap exists, suggesting a sudden gap closure and topological phase transition around .
PACS: 79.60.-i – Photoemission and photoelectron spectra / 73.20.-r – Electron states at surfaces and interfaces / 73.20.At – Surface states, band structure, electron density of states
© EPLA, 2020
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