Volume 128, Number 5, December 2019
|Number of page(s)||4|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||03 February 2020|
Dual-band light-emitting diode based on microwheel cavity
1 College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications - Nanjing 210003, China
2 MIIT Key Laboratory of Advanced Display Material and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology - Nanjing, 210094, China
Received: 9 September 2019
Accepted: 19 December 2019
Compact and broadband electroluminescent (EL) devices have garnered considerable interest in recent years. In this study, we have fabricated a light-emitting diode (LED) based on a GaN microwheel cavity with a peak emission wavelength of 438 nm. Another emission peak at 512 nm is realized by coating CH3NH3PbBr3 on the LED. The microwheel-cavity–based LED is fabricated by photolithography and inductively coupled plasma etching process. The opto-electrical performance of the device is characterized in terms of the EL spectrum, luminescence intensity, full width at half maximum, and 3 dB bandwidth. Compared to the device without the CH3NH3PbBr3 layer, the proposed device exhibits dual-band illumination and higher 3 dB bandwidth with potential applications in optical communication.
PACS: 85.60.Jb – Light-emitting devices / 78.60.Fi – Electroluminescence / 61.72.uj – III-V and II-VI semiconductors
© EPLA, 2020
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