Volume 88, Number 6, December 2009
Article Number 67005
Number of page(s) 6
Section Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
Published online 01 December 2009
EPL, 88 (2009) 67005
DOI: 10.1209/0295-5075/88/67005

Coherent control of electron propagation and capture in semiconductor heterostructures

D. E. Reiter1, 2, E. Ya. Sherman3, 4, A. Najmaie2 and J. E. Sipe2

1   Institut für Festkörpertheorie, Westfälische Wilhelms-Universität Münster - W.-Klemm Str. 10, 48149, Münster, Germany, EU
2   Department of Physics and Institute for Optical Sciences, University of Toronto - 60 St. George Street, Toronto, Ontario, Canada M5S 1A7
3   Department of Physical Chemistry, Universidad del País Vasco UPV-EHU - Bilbao 48080, Spain, EU
4   IKERBASQUE Basque Foundation for Science - Alameda Urquijo 36-5, 48011, Bilbao, Bizkaia, Spain, EU

received 12 September 2009; accepted in final form 19 November 2009; published December 2009
published online 22 December 2009

We theoretically study the use of quantum interference to coherently control the transverse direction in which carriers are optically injected in a semiconductor heterostructure, and the subsequent transport and capture of these carriers. We consider a structure consisting of three quantum wells, where carriers can be ejected from the middle one in a given direction by coherently controlled optical pulse excitations. After traveling through the barrier, electrons are slowed down by space-charge effects, and can be captured in the side wells by emitting a phonon. If the side wells are different, the coherent control of the injection can be monitored optically. We propose a design of a AlGaAs heterostructure for a possible experimental realization of the effects considered in this paper.

73.63.Hs - Quantum wells.
78.47.-p - Spectroscopy of solid state dynamics.

© EPLA 2009