Volume 36, Number 3, October III 1996
|Page(s)||203 - 208|
|Section||Condensed matter: electronic structure, electrical, magnetic and optical properties|
|Published online||01 September 2002|
Steady-state bulk current at high magnetic fields in Corbino-type GaAs/AlGaAs heterostructure devices
Max-Planck-Institut für Festkörperforschung -
Heisenbergstrasse 1, D-70569 Stuttgart, Germany
Accepted: 16 September 1996
Application of a dual-current technique to a double-boundary geometry helps demonstrate that i) the (global) Hall effect on a boundary reflects only the current injected via the same boundary while ii) the magnetoresistive voltage is sensitive to current compensation and, therefore, the net current within the specimen. The invariance of these features from the classical to the quantum limits suggests that a bulk current is maintained under steady-state quantized Hall effect conditions, in the low-current linear-response regime.
PACS: 73.25.+i – Surface conductivity and carrier phenomena / 73.50.Jt – Electronic transport phenomena in thin films: Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) / 72.20.My – Conductivity phenomena in semiconductors and insulators: Galvanomagnetic and other magnetotransport effects
© EDP Sciences, 1996
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